Atomic Layer Deposition (ALD)
The ALD product family covers single-chamber and dual-chamber atomic layer deposition systems for research and pilot-scale fabrication. Based on precise, pulse-wise precursor dosing, both platforms enable conformal thin-film growth on planar wafers, 3D complex substrates, powders, particles, porous media, and high-aspect-ratio structures. With Swagelok ALD valves, heated precursor lines, PLC + touchscreen control, and optional glovebox/Ozone/QCM integration, the systems serve oxide, nitride, metal, and hybrid thin-film applications from 4-inch to 12-inch substrates.
Product Image
Core Capabilities
- True ALD Growth: self-limited, atomic-layer control of thickness and composition
- Complex Geometry Coating: 3D substrates, powders, granules, porous and high-aspect-ratio materials
- Multi-Phase Precursor Support: liquid, solid, gas, and ozone precursors; up to 8 precursor channels
- Heated Front-End: removable heating jackets for lines and source containers, RT–250 °C (±0.5 °C)
- High-Temperature Chambers: MNT-S: RT–400 °C; MNT-D: RT–500 °C (±0.5 °C chamber control)
- Clean Vacuum Architecture: baked vacuum lines to 200 °C, foreline thermal trap at 300 °C, oil / chemical-resistant / dry pump options
- PLC + HMI Control: recipe-based sequencing, valve timing, temperature and pressure logging
- Modular Upgrades: ozone generator, powder deposition tray, glovebox coupling, QCM, exhaust treatment
Key Specifications
| Item | Single Chamber | Dual Chamber |
|---|---|---|
| Reactor type | Cross-flow single chamber | Showerhead dual chamber |
| Substrate size | 4–12 inch single wafer | 4–8 inch single wafer |
| Process temp. | RT – 400 °C, ±0.5 °C | RT – 500 °C, ±0.5 °C |
| ALD valves | Swagelok ALD valves, 200 °C rated | Same |
| Precursor sources | Liquid / solid / gas / ozone, up to 8 routes | Same |
| Source containers | 50 mL volatile / 100 mL carrier-gas, customizable | Same |
| Carrier gas | N₂ or Ar, MFC controlled | Same |
| Line / source heating | RT–250 °C, ±0.5 °C | Same |
| Vacuum system | Oil / chemical-oil / dry pump | Same |
| Pressure range | 1000 – 2.3×10⁻⁴ Torr | Same |
| Vacuum lines | Baked to 200 °C; foreline thermal trap 300 °C | Same |
| Control | Touchscreen + PLC | Same |
| Frame | Mobile aluminum profile, stainless panel; 720×700×1000 to 1000×1000×1000 mm | Mobile frame; up to 1000×1500×1800 mm |
| Options | Ozone / powder tray / glovebox / QCM / exhaust treatment | Same, plus dual-chamber uniformity & throughput |
Optional / Advanced Configurations
- Dual-Chamber Reactor : showerhead distribution, RT–500 °C, better film uniformity on 4–8 inch wafers
- Ozone Generator: enhanced oxidation ALD (Al₂O₃, ZnO, TiO₂, etc.)
- Powder Deposition Tray: ALD coating of powders, catalysts, particles
- Glovebox Coupling: air-sensitive precursors / 2D-material-integrated ALD
- Quartz Crystal Microbalance (QCM): in-situ growth-rate / thickness monitoring
- Exhaust Treatment Unit: safe handling of corrosive / ozone-containing effluent
Typical Applications
- Microelectronics & Semiconductors: Gate dielectric layers, interface passivation, interlayer diffusion barriers, metal contact layers
- Energy Storage: Solid electrolyte coating, cathode/anode surface modification, barrier layers, charge transport layers
- Optoelectronics & Photovoltaics: Interface modification layers, surface energy modulation, thin-film encapsulation
- Catalysis & Powder Materials: Atomic-level coating of nanoparticles, encapsulation of high-surface-area catalysts
- 2D Materials & Nanoscience: Dielectric isolation and surface passivation for hBN/graphene/TMD devices